Intel equal intelligibly behind information technology rival TSMC and Samsung with the first generation of extreme ultraviolet ( EUV ) lithography technology, merely information technology surely want to be the first to adopt the next-generation EUV tool sport ampere 0.55 sodium ( operating room high-NA ) that provide high resolution and productivity. This workweek Intel announced that information technology experience regulate information technology second experimental High-NA tool from ASML. Intel announce design to espouse ASML ‘s High-NA Twinscan EXE scanner for high-volume manufacture ( HVM ) start in 2025, which be when the company intend to startle exploitation information technology 18A ( ~1.8 new mexico ) fabrication technology. To suffice so, Intel accept experiment with High-NA tool since 2018 when information technology receive ASML ‘s Twinscan EXE:5000, the industry ‘s first EUV scanner with vitamin a 0.55 numerical aperture. This week the ship’s company rate ASML ‘s next-generation High-NA tool, the Twinscan EXE:5200 .
“ compare to the current EUV arrangement, our advanced extend EUV roadmap deliver continue lithographic improvement astatine reduce complexity, cost, hertz prison term and energy that the chip industry inevitably to drive low-cost scaling well into the next ten, ” state ASML president of the united states and CTO martin van den verge.
( visualize accredit : ASML )
High-NA EUV instrument be crucial for high solution (
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( prototype credit : ASML )
fair like the borrowing of 0.33 sodium EUV practice not eliminate the usage of deep ultraviolet ( DUV ) lithography, 0.55 sodium EUV volition not substitute the existing DUV and EUV tool use indiana modern fabs. in fact, ASML design to continue develop more advance DUV and 0.33 sodium EUV scanner for long time to occur. interim, High-NA EUV lithography will beryllium vitamin a key engineering to reduce transistor size and increase transistor density .