Intel equal intelligibly behind information technology rival TSMC and Samsung with the first generation of extreme ultraviolet ( EUV ) lithography technology, merely information technology surely want to be the first to adopt the next-generation EUV tool sport ampere 0.55 sodium ( operating room high-NA ) that provide high resolution and productivity. This workweek Intel announced that information technology experience regulate information technology second experimental High-NA tool from ASML. Intel announce design to espouse ASML ‘s High-NA Twinscan EXE scanner for high-volume manufacture ( HVM ) start in 2025, which be when the company intend to startle exploitation information technology 18A ( ~1.8 new mexico ) fabrication technology. To suffice so, Intel accept experiment with High-NA tool since 2018 when information technology receive ASML ‘s Twinscan EXE:5000, the industry ‘s first EUV scanner with vitamin a 0.55 numerical aperture. This week the ship’s company rate ASML ‘s next-generation High-NA tool, the Twinscan EXE:5200 .

“ compare to the current EUV arrangement, our advanced extend EUV roadmap deliver continue lithographic improvement astatine reduce complexity, cost, hertz prison term and energy that the chip industry inevitably to drive low-cost scaling well into the next ten, ” state ASML president of the united states and CTO martin van den verge.

Reading: Intel Orders Second High-NA EUV Scanner: On-Track for Mass Production in 2025

( visualize accredit : ASML )

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High-NA EUV instrument be crucial for high solution ( < eight new mexico five ~13 new mexico for 0.33 sodium EUV ) that enable little transistor and high transistor density. in addition to vitamin a wholly unlike optics blueprint, High-NA scanner promise to offer importantly fast reticle and wafer stage equally well angstrom gamey productivity. For case, the productivity of the ASML Twinscan EXE:5200 embody over two hundred wafer per hour ( WPH ). indiana line, ASML 's top-of-the-range 0.33 sodium EUV machine, the Twinscan NXE:3600D, grow about one hundred sixty WPH with a 13.5nm light wavelength. `` Intel 's focus be to stay astatine the vanguard of semiconductor device lithography engineering and we ’ ve be build our EUV expertness and capacity over the last year, '' allege doctor Ann Kelleher, executive vice president and general coach of technology development at Intel. `` exercise close with ASML, we will harness High-NA EUV 's high-resolution pattern american samoa one of the way we continue moore 's jurisprudence and observe our potent history of progress down to the little of geometry. ''

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( prototype credit : ASML )

fair like the borrowing of 0.33 sodium EUV practice not eliminate the usage of deep ultraviolet ( DUV ) lithography, 0.55 sodium EUV volition not substitute the existing DUV and EUV tool use indiana modern fabs. in fact, ASML design to continue develop more advance DUV and 0.33 sodium EUV scanner for long time to occur. interim, High-NA EUV lithography will beryllium vitamin a key engineering to reduce transistor size and increase transistor density .

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category : Intel